? silikron semiconductor co.,ltd. 2009.5.15 version : 1.0 page 1of5 SSF3014 absolute maximum ratings parameter max. units i d @t c =25 ? c continuous drain current,vgs@10v 60 a i d @t c =100 ? c continuous drain current,vgs@10v 42 i dm pulsed drain current 240 p d @t c =25 ? c power dissipation 120 w linear derating factor 0.74 w/ ? c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 235 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range ?55 to +150 ? c thermal resistance parameter min. typ. max. units r jc junction-to-case ? 1.03 ? ? c/w r ja junction-to-ambient ? ? 62 electrical characteristics @tj=25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain-to-source breakdown voltage 60 ? ? v v gs =0v,i d =250 a r ds(on) static drain-to-source on-resistance ? 7.2 10 m ? v gs =10v,i d =30a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250 a g fs forward transconductance - 60 ? s v ds =5v,i d =30a i dss drain-to-source leakage current ? ? 2 a v ds =60v,v gs =0v ? ? 10 v ds =60v, v gs =0v,t j =150 ? c i gss gate-to-source forward leakage ? ? 100 na v gs =20v gate-to-source reverse leakage ? ? -100 v gs =-20v SSF3014 top view (to220) id =60a bv=60v rdson=10mohm feathers: ? advanced trench process technology ? avalanche energy, 100% test ? fully characterized avalanche voltage and current description: the SSF3014 is a new generation of middle voltage and high current n?channel enhancement mode trench power mosfet. this new technology in creases the dev ice reliability and electrical parameter repeatability. SSF3014 is assembled in high reliability and qualified assembly house. application: ? power switching application
? silikron semiconductor co.,ltd. 2009.5.15 version : 1.0 page 2of5 SSF3014 q g total gate charge ? 45 ? nc i d =30a v dd =30v v gs =10v q gs gate-to-source charge ? 4 ? q gd gate-to-drain("miller") charge ? 15 ? t d(on) turn-on delay time ? 14.6 ? ns v dd =30v i d =2a ,r l =15 ? r g =2.5 ? v gs =10v t r rise time ? 14.2 ? t d(off) turn-off delay time ? 40 ? t f fall time ? 7.3 ? c iss input capacitance ? 1480 ? pf v gs =0v v ds =25v f=1.0mhz c oss output capacitance ? 190 ? c rss reverse transfer capacitance ? 135 ? source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) ? ? 60 a mosfet symbol showing the integral reverse p-n junction diode. i sm pulsed source current . (body diode) ? ? 240 v sd diode forward voltage ? ? 1.3 v t j =25 ? c,i s =40a,v gs =0v t rr reverse recovery time 33 ? ns t j =25 ? c,i f =60a di/dt=100a/ s q rr reverse recovery charge 61 ? nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + ld) gate charge test circuit: eas test circuit: bv dss notes: repetitive rating; pulse width limited by max junction temperature. test condition: l =0.3mh, vdd = 30v,id=37a pulse width 300 s, duty cycle 1.5% ; rg = 25 ? ? ? starting tj = 25c
? silikron semiconductor co.,ltd. 2009.5.15 version : 1.0 page 3of5 SSF3014 transfer characteristic capacitance on resistance vs junction temperature breakdown voltage vs junction temperature switch waveforms: switch time test circuit
? silikron semiconductor co.,ltd. 2009.5.15 version : 1.0 page 4of5 SSF3014 gate charge source-drain diode forward voltage safe operation area max drain current vs junction temperature transient thermal impedance curve
? silikron semiconductor co.,ltd. 2009.5.15 version : 1.0 page 5of5 SSF3014 to220 mechanical data:
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